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基于已报道的4H-SiC材料在紫外波段(325—390nm)吸收系数的测定,结合经验公式,采用外推和多项式拟合方法分析4H-SiC材料在200—400nm紫外波段的吸收系数,并得到4H-SiC材料的吸收系数与波长的关系式。对4H-SiC吸收系数的分析研究将作为4H-SiC光电探测器结构设计的一个重要依据。
Based on the reported absorption coefficients of 4H-SiC in the UV range (325-390nm), the absorption coefficients of 4H-SiC in the UV range of 200-400nm were analyzed by empirical formulas and extrapolation and polynomial fitting methods. Absorption coefficient and wavelength of 4H-SiC material. The analysis of the 4H-SiC absorption coefficient will be an important basis for the structural design of the 4H-SiC photodetector.