论文部分内容阅读
报道了具有特殊界面结构(界面包含三个Zn—Te或Te—Zn化学键)的非掺杂ZnSe/BeTe II型量子阱在低温(5—10K)条件下的空间间接光致发光(PL)光谱的实验结果.PL光谱显示了一个较弱的双峰结构和较低的线性偏振度,并且这两个峰的线性偏振度相反.此外,这个PL光谱也强烈地依赖于一个外加电场的变化.这些结果表明样品的两个发光峰是分别来自两个界面的发光跃迁,并且特殊界面结构降低了空间间接PL的发光效率和线性偏振性,以及界面附近的内秉电场.随着激发强度的增加,PL谱的高能端发光峰显示了一个快速的增长.这个行为被解释为与该发光峰对应的异质界面两侧已形成电荷高密度,并导致了费米边异常(Fermi-nergy edge sigularity)效应的发生.
Reported the spatial indirect photoluminescence (PL) spectra of undoped ZnSe / BeTe type II quantum wells with a special interface structure (interface containing three Zn-Te or Te-Zn chemical bonds) at low temperature (5-10K) The PL spectra show a weaker bimodal structure with lower linear polarizations and the linear polarizations of the two peaks are reversed.In addition, this PL spectrum also strongly depends on the change of an applied electric field. These results indicate that the two luminescence peaks of the sample are the luminescence transitions from the two interfaces, respectively, and the special interfacial structure reduces the luminescence efficiency and linear polarization of the spatial PL, and the intrinsic electric field near the interface.With the increase of the excitation intensity , The PL spectrum showed a rapid increase in the high-energy terminal luminescence.This behavior was interpreted as the formation of a high charge density on both sides of the hetero-interface corresponding to the luminescence peak and resulted in the Fermi-nergy edge sig- natureity ) The effect of the occurrence.