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利用隧道二极管的非线性伏-安特性可以得到高速双稳开关线路,所以把它作为存儲元件是非常有前途的。1961年日本已試制成了容量为17位×16字、工作周期为0.2微秒的隧道二极管存儲器。1962年吴国又試制成了容量力9字×3位、存取周期为15毫微秒的存儲器模型。这篇文章簡单說明隧道二极管存儲元件的工作原理,介紹各种存儲方案及1963年上半年前所发表的一些存儲器的性能,并归纳了所存在的問题。对該项工作的发展也进行了探討。
Taking advantage of the tunnel diode’s non-linear volt-ampere characteristic, a high-speed, bi-stable switching circuit can be obtained, so it is very promising as a memory device. In 1961 Japan has made a trial of a tunnel diode memory with a capacity of 17 bits x 16 words and a duty cycle of 0.2 microseconds. In 1962, Wu made another memory model with capacity of 9 words × 3 bits and access cycle of 15 nanoseconds. This article gives a brief explanation of the working principle of the tunnel diode storage element, introduces various storage schemes and some of the memory features published before the first half of 1963, and summarizes the existing problems. The development of this work was also discussed.