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经高温热处理后的 SiGe∶GaP 半导体温差电材料,其微观结构由具有富 Si 相特征变化成为具有富 Ge 相特征,温差电优值也得到了提高。实验还表明,材料晶格热导率的降低与富 Si 相的消失和富 Ge相的出现有关。然而,塞贝克系数和电导率的显著变化却与微观结构中富 Si 相和富 Ge 相的变化基本无关。通过对材料微观结构和温差电特性比较发现,具有富 Ge 相特征的微观结构对应于较大的温差电优值。
The SiGe:GaP semiconductor thermoelectric material after high-temperature heat treatment has a microstructure characterized by a Si-rich phase and a Ge-rich phase, and the thermoelectric power has also been improved. Experiments also show that the decrease of lattice thermal conductivity is related to the disappearance of Si-rich phase and the appearance of Ge-rich phase. However, the significant changes in Seebeck coefficient and conductivity have little to do with the change of Si-rich phase and Ge-rich phase in the microstructure. By comparing the microstructures and the thermoelectric properties of the material, it is found that the microstructure with Ge rich phase corresponds to the larger thermoelectric value.