薄p型层GaN基p-i-n型紫外探测器的反向漏电特性

• 作 者: 邹翔 汪莱 裴晓将 赵维 王嘉星 罗毅
• 机 构: 清华大学电子工程系清华信息科学与技术国家实验室(筹)/集成光电子学国家重点实验室,
• 出 处: 半导体光电
• 发表日期: 2011年02期
• 关键词: GaN p-i-n 电特性 反向漏电流 外延生长 器件 MOCVD 紫外探测器 探测率 响应度

制备了薄p型层GaN基p-i-n型紫外探测器,并对其反向漏电特性进行了研究。探测器材料采用金属有机化学气相沉积(MOCVD)方法在蓝宝石衬底上外延生长获得,p-GaN的厚度为30nm。基于该材料制作了具有共面电极的探测器器件,并采用SiO2对刻蚀侧壁进行了钝化。测试结果表明,结面积为1.825×10-4cm2的器件在-1V时的反向漏电流面密度为3.0×10-9 A/cm2,优质因子达到3.7×109Ω.cm2。

A thin p-type GaN-based p-i-n UV detector was fabricated and its reverse leakage characteristics were studied. The detector material was epitaxially grown on a sapphire substrate by a metal-organic chemical vapor deposition (MOCVD) method. The thickness of the p-GaN layer is 30 nm. Based on this material, a detector device with a coplanar electrode was fabricated, and the etched sidewalls were passivated with SiO2. The test results show that the device with junction area of ​​1.825 × 10-4cm2 has a reverse leakage current density of 3.0 × 10-9 A / cm2 and a good factor of 3.7 × 109Ω.cm2 at -1V.