Dynamics of a pair of electron and hole in semiconductor superlattice under an intense electric fiel

• 作 者: 阎结昀
• 机 构: Department of Physics, Tsinghua University,
• 出 处: Chinese Physics B
• 发表日期: 2008年12期
• 关键词: exciton dynamically Coulomb behaviour localized calculating tight localization p

This paper investigates the behaviour of a pair of electron and hole in semiconductor superlattice under an external electric field with the consideration of Coulomb interaction. By numerically calculating the corresponding probability in the nearest neighbour tight binding approximation, we find that the single electron (or the hole) can not be dynamically localized due to the Coulomb interaction, while the dynamic localization of exciton (the pair of the electron and hole) still exists. Moreover we find that with the increase of the intensity of electric field, the exciton can be dynamically localized more completely.

This paper investigates the behavior of a pair of electron and hole in semiconductor superlattice under an external electric field with the consideration of Coulomb interaction. By numerically calculating the corresponding probability in the nearest neighbor tight binding approximation, we find that the single electron (or the hole we can not be dynamically localized of exciton (the pair of the electron and hole) still exists. Moreover we find that with the increase of the intensity of electric field, the exciton can be dynamically localized more completely.