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从理论上研究子电子-声子相互作用对Morse量子阱中光吸收系数的影响,首先利用微扰论方法求出考虑极化子效应时的电子波函数和能级,然后利用密度矩阵和迭代法得到光吸收系数的解析表达式,最后以典型的GaAs/AlGaAs Morse量子阱为例进行数值计算。结果表明,极化子效应使光吸收系数比仅考虑电子的情况增大了,并且在相同光强的情况下吸收饱和现象更明显;极化子效应的影响随着阱的非对称性的增强而增大;电声相互作用对电子能级的修正导致光吸收系数峰值向高能方向偏移。
In theory, we study the influence of the electron-phonon interaction on the light absorption coefficient in the Morse quantum well. First we use the perturbation theory to find the electron wave function and energy level when considering the polaron effect. Then we use the density matrix and iteration Method to obtain the analytic expression of the light absorption coefficient. Finally, a typical GaAs / AlGaAs Morse quantum well is taken as an example for numerical calculation. The results show that the polarizer effect makes the light absorption coefficient larger than the electron only, and the absorption saturation phenomenon is more obvious under the same light intensity. The influence of the polaron effect increases with the asymmetry of the well But the correction of electronic energy level caused by electroacoustic interaction leads to the shift of peak value of light absorption coefficient to high energy.