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在经过退火的p-Pb_(0.79)Sn_(0.21)Te基体上,蒸发厚度约1000埃的金属层(如铟等),随后进行温度为200～300℃时间为2小时的热扩散;已制成探测率D_(λmax)～1×10~(10)厘米·赫1/2·瓦~(-1)(77K)、峰值响应波长～10微米的光电二极管。本文对金属-碲锡铅光电二极管的光谱响应及扩散金属的影响进行了初步的讨论。
On the annealed p-Pb_ (0.79) Sn_ (0.21) Te substrate, a metal layer (such as indium and the like) is evaporated to a thickness of about 1000 Å, followed by thermal diffusion at a temperature of 200 to 300 ° C for 2 hours; Into a detection rate of D_ (λmax) ~ 1 × 10 ~ (10) cm · Hz 1/2 · W -1 (77K), peak response wavelength ~ 10 microns photodiode. This paper discusses the spectral response of metal-tellurium-tin-lead photodiodes and the effects of diffusion metals.