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在建立GCT器件模型的基础上,利用silvaco软件,研究了缓冲层与透明阳极结构对GCT性能影响。模拟结果表明,决定GCT的通态压降的关键因素是缓冲层与透明阳极各自区域中的总杂质量。通过协调各自区域的峰值掺杂浓度与厚度,可以合理地控制该区域的总杂质量,降低GCT的通态压降。这些结果对于进一步优化GCT器件设计与制造有着重要的参考价值。
Based on the model of GCT device, the influence of buffer layer and transparent anode structure on the performance of GCT was studied by using silvaco software. The simulation results show that the key factor determining the on-state voltage drop of the GCT is the total amount of impurities in the respective regions of the buffer layer and the transparent anode. By coordinating the peak doping concentrations and thicknesses in their respective regions, the total amount of impurities in the region can be rationally controlled and the on-state voltage drop of the GCT can be reduced. These results have important reference value for further optimizing GCT device design and manufacturing.