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引言在相控阵雷达中需要使用固态功率放大器。在现有的雷达系统(如TPS-59和“铺路爪”)中,硅双极晶体管的使用频率高达1.5千兆赫。但在S波段(2～4千兆赫)中,适用于许多雷达的、且具有良好性能的固态器件还没研制出来。因此目前正在研制这种硅双极功率晶体管,不过在研制中碰到了许多问题:器件的材料和几何形状都要求很严格,而且加工过程又很复杂。此外,现有的器件的输出功率虽然相当好,但因增益低,需要多级放大,这样既增加了硅双极晶体管放大器的尺寸、重量和成本,又降低了总效率。砷化镓场效应晶体管,有着不太复杂的立式几何形状和潜在的高增益及效率,完全可代替硅双极晶体管。在参考文献中,介绍一种高功率连续波砷化镓场效应(CW GaAs FET)
Introduction Phased-array radars require the use of solid-state power amplifiers. In existing radar systems such as TPS-59 and “pawl”, silicon bipolar transistors are used at frequencies up to 1.5 GHz. However, in the S-band (2 to 4 GHz), solid-state devices suitable for many radars and having good performance have not yet been developed. So this kind of silicon bipolar power transistor is being developed at present, but has encountered many problems in the research and development: The material and geometry of the device all require the rigorous, and the processing process is very complicated. In addition, the output power of existing devices is quite good, but due to the low gain, multi-stage amplification is required, thus increasing the size, weight and cost of the silicon bipolar transistor amplifier while reducing the overall efficiency. Gallium arsenide field effect transistor, with less complex vertical geometry and potential high gain and efficiency, can replace the silicon bipolar transistor. In the reference, a high power continuous wave GaAs field effect (CW GaAs FET)