Atomic scale epitaxial growth of BaTiO_3 thin films by laser molecular beam epitaxy

• 作 者: 王会生 马昆 刘彦巍 彭志强 崔大复 吕惠宾 周岳亮 陈正豪 李林 杨国桢
• 机 构: Laboratoryof Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese
• 出 处: Science in China,Ser.A
• 发表日期: 1997年05期
• 关键词: epitaxial ferroelectric epitaxy Atomic YBCO ambient ozone pulsed titanate silver

By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxial growth of BaTiO3(BTO) thin films on SrTiO3 (STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy reveal that the BTO films are c-axis oriented single crystals with smooth surface. The multi-layer ferroelectric/superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained.

Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD) , scanning electron microscopy, and transmission electron microscopy reveal that the BTO films are c-axis oriented single crystals with smooth surfaces. The multi-layer ferroelectric / superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained.