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随着集成电路技术的飞速发展,集成度越来越高,在大规模集成电路的研制和生产中,要求管芯有很高的成品率,随之对硅单晶片的表面就提出了更为严格的要求,尤其对在衬底晶片上直接制作~(I_2)L电路情况,对原始片的表面和缺陷的要求更高。为此,我们在晶片经过铬离子和铜离子机械抛光,化学抛光之后又增加了汽相抛光——氯化氢抛光工艺。一、原理晶片表面的缺陷会引起扩硼二极管反向漏电的增大,扩磷三极管发射结和收集结局部击穿,造成管芯成品率下降,我们把满足光洁度和平整度要求的硅单晶片,在1200℃高温下,用氢气携带的氯化氢再剥去4～6μ厚度,从而减少表面缺陷,提高二极管特性和三极管成品率。化学反应式
With the rapid development of integrated circuit technology, the integration is more and more high, in the development and production of large scale integrated circuits, the die is required to have a high yield, followed by the surface of the silicon single-chip proposed more Strict requirements, especially for the direct production of ~ (I_2) L circuit on the substrate wafer, the requirements of the original film surface and defects higher. For this reason, we mechanically polish the wafers with chromium ions and copper ions and add the vapor phase polish after the chemical polishing - the hydrogen chloride polishing process. First, the principle of defects on the surface of the wafer will cause the reverse leakage of boron-doped diodes increases, the phosphorus emitter junction and the breakdown of the breakdown breakdown, resulting in decreased die yield, we meet the requirements of smoothness and smoothness of the silicon single-chip , At 1200 ℃ high temperature, with hydrogen hydrogen chloride and then stripped 4 ~ 6μ thickness, thereby reducing surface defects and improve the diode characteristics and yield of the transistor. Chemical reaction