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The physical and electrical properties of a Ge/GeO_2/HfO_2/Al gate stack are investigated.A thin interfacial GeO_2 layer(~ 1 nm) is formed between Ge and HfO_2 by dual ozone treatments,which passivates the Ge/high-k interface.Capacitors on p-type Ge substrates show very promising capacitance-voltage(C-V) characteristics by using in situ pre-gate ozone passivation and ozone ambient annealing after high-k deposition,indicating efficient passivation of the Ge/HfO_2 interface.It is shown that the mid-gap interface state density at the Ge/GeO_2 interface is 6.4×10~(11) cm~(-2)·eV~(-1).In addition,the gate leakage current density of the Ge/GeO_2/HfO_2/Al gate stack passivated by the dual ozone treatments is reduced by about three orders of magnitude compared to that of a Ge/HfO_2/Al gate stack without interface passivation.
The physical and electrical properties of a Ge / GeO 2 / HfO 2 / Al gate stack are investigated. A thin interfacial GeO 2 layer (~ 1 nm) is formed between Ge and HfO 2 by dual ozone treatments, which passivates the Ge / high-k interface. Capacitors on p-type Ge substrates show very promising capacitance-voltage (CV) characteristics by using in situ pre-gate ozone passivation and ozone ambient annealing after high-k deposition, indicating efficient passivation of the Ge / HfO_2 interface. the mid-gap interface state density at the Ge / GeO 2 interface is 6.4 × 10 ~ (11) cm -2 (-2) · eV -1 .In addition, the gate leakage current density of the Ge / GeO_2 / HfO_2 / Al gate stack passivated by the dual ozone treatments is reduced by about three orders of magnitude compared to that of a Ge / HfO 2 / Al gate stack without interface passivation.