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1 概要硅压敏电阻传感器在运输和工业控制中已经成为主要探测元件。在开发高性能仪器方面,它的作用越来越大。然而,这种传感器探测结果的准确度与温度有关。这种温度特性使其在实际应用中受到了限制。在当前所用的硅压敏电阻传感器中,对压力灵敏度都进行了温度补偿。在制造过程中己经在片子上做了晶体管补偿电路,这样就大大改善了硅压敏电阻传感器受温度的影响,但对失调电压的漂移研究很少。对失调电压进行温度补偿需要复杂的外部电路,失调电压随温度变化的幅度因不同的传感器而有很大的不同,所以失调电压的补偿是很复杂
1 Overview Silicon piezoresistive sensors have become the primary detection element in transportation and industrial control. Its role is growing in developing high-performance instruments. However, the accuracy of this sensor detection is temperature dependent. This temperature characteristic has limited its practical application. In current silicon piezoresistive sensors, the pressure sensitivity is temperature compensated. The transistor compensation circuit has been made on the chip during the manufacturing process, which greatly improves the temperature dependence of the silicon varistor sensor, but little research has been done on the drift of the offset voltage. Compensating for the offset voltage requires complex external circuits. The magnitude of the offset voltage with temperature varies widely depending on the sensor, so offset voltage compensation is complicated