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绝缘栅双极型晶体管(Insulated Gate BipolarTransistor-IGBT),最初是为解决 MOSFET 的高导通压降而难于制成兼有高压和大电流特性的功率器件以及 GTR 的工作频率低、驱动电路功率大等不足而研制的双机理复合器件(Double Mecha-
Insulated gate bipolar transistor (Insulated Gate BipolarTransistor-IGBT), the first is to solve the MOSFET high voltage drop and difficult to make both high-voltage and high current characteristics of the power device and the GTR operating frequency is low, the drive circuit power And other issues developed by the dual-mechanism composite device (Double Mecha-