Material removal rate of 6H-SiC crystal substrate CMP using an alumina(Al_2O_3) abrasive

• 作 者: 苏建修 杜家熙 马利杰 张竹青 康仁科
• 机 构: Henan Institute of Science and Technology,Henan University of Technology,Key Laboratory for Precisio
• 出 处: 半导体学报
• 发表日期: 2004年期
• 关键词: polishing abrasive alumina slurry oxidant wafer rotational hardness thereby ULSI

The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate(0001) Si and a(0001) C surface have been studied based on the alumina abrasive in chemical mechanical polishing(CMP).The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.

The influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational velocity of the polishing platen and the carrier and the polishing pressure, on the material removal rate of SiC crystal substrate (0001) C surface have been studied based on the alumina abrasive in chemical mechanical polishing (CMP). The results proposed by our research here will provide a reference for developing the slurry, optimizing the process parameters, and investigating the material removal mechanism in the CMP of SiC crystal substrate.