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相对GaAs材料而言,GaN具有更高的击穿电压和更高的功率密度,使得GaN更适合用于宽带功率放大器的设计和实现。采用比GaAs赝配高电子迁移率晶体管更小栅宽的器件,设计和实现了一种2～4 GHz GaN微波单片集成功率放大器,达到了与GaAs大栅宽器件同样的输出功率。通过研究GaN功率器件的材料生长、器件设计、模型提取、电路匹配以及热分析等技术,并对电路的设计和工艺进行优化。在器件输入端设计了有耗匹配网络以获得宽带,在输出端设计了电抗匹配网络以降低功率损耗,提高效率。把芯片装配到测试夹具进行了10%脉冲条件下的功率测试,测试结果表明,28 V供电、工作电流为1.2 A时,微波单片集成功率放大器在频带内的功率增益大于20 dB,输出功率约为10 W,功率附加效率达到30%。电路芯片尺寸为3.99 mm×2.1 mm。
Compared with GaAs material, GaN has higher breakdown voltage and higher power density, making GaN more suitable for the design and implementation of wideband power amplifier. A 2 to 4 GHz GaN microwave monolithic integrated power amplifier is designed and implemented with the same gate power as the GaAs wide gate wide device using a smaller gate width than the GaAs pseudomorphic high electron mobility transistor. Through the research of GaN power device material growth, device design, model extraction, circuit matching and thermal analysis techniques, and circuit design and process optimization. In the input end of the device, a matched matching network is designed to obtain broadband, and a reactive matching network is designed at the output to reduce the power loss and improve the efficiency. The test results show that the power gain of the microwave monolithic integrated power amplifier in the frequency band is more than 20 dB when the power supply is 28 V and the operating current is 1.2 A. The output power About 10 W, power added efficiency of 30%. The circuit chip size is 3.99 mm × 2.1 mm.