论文部分内容阅读
回顾了十年来国内外在ＧａＡｓＦＥＴ大信号模型方面的研究进展，提出了可用于ＭＥＳＦＥＴ和ＨＥＭＴ的统一的精确沟道电流模型。
The research progress of GaAsFET large signal model at home and abroad over the past decade is reviewed. A uniform and accurate channel current model that can be used for MESFET and HEMT is proposed.