Dependence of Spin-orbit Parameters in Al_xGa_(1-x)N/GaN Quantum Wells on the Al Composition of the

• 作 者: 李明
• 机 构: College of Electrical and Information Engineering, Xuchang University,
• 出 处: Communications in Theoretical Physics
• 发表日期: 2013年07期
• 关键词: orbit polarized Wells confined contributions manipulation slowly helpful enginee

In this paper, we obtain considerable spin-orbit (SO) parameters in AlxGa1-xN/GaN quantum wells (QWs) with sheet carrier concentration Ns=120×1011/cm2 . With increasing Al content (x) of the barrier, the SO parameters increase as a whole, and the two major contributions are found to be the decrease of the expansion region of the envelope functions and the increase of the polarized electric field in the well. Compared with the Rashba parameters for the first two subbands, the intersubband SO parameter is a bit smaller and varies more slowly with x. The results indicate the SO parameters, especially the Rashba parameters can be engineered by the Al composition of the barrier, which may be helpful to the spin manipulation of III-nitride low-dimensional heterostructures.

With increasing Al content (x) of the barrier, the SO (SO) parameters in AlxGa1-xN / GaN quantum wells (QWs) with sheet carrier concentration Ns = 120 × 1011 / parameters increase as a whole, and the two major contributions are found to be the decrease of the expansion region of the envelope functions and the increase of the polarized electric field in the well. Compared with the Rashba parameters for the first two subbands, the intersubband SO parameter is a bit smaller and varies more slowly with x. The results of the SO parameters, especially the Rashba parameters can be engineered by the Al composition of the barrier, which may be helpful to the spin manipulation of III-nitride low-dimensional heterostructures.