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·《中国学术期刊文摘》(中文版)述评文章摘录·稀磁半导体的研究进展赵建华(中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083)主要介绍了III-V族稀磁半导体(Ga,Mn)As的研究进展,包括(Ga,Mn)As的生长制备、基本磁性质、磁输运特征、磁光性质、磁性起源、相关的异质结构和自旋注入等,同时还简单介绍了其他稀磁半导体如IV族、III-VI族和IV-VI族等稀磁半导体的研究进展,在文章的最后描述了理想的稀磁半导体应该具备的特征以及对未来的展望。
· Excerpt from “Review of Chinese Academic Bulletin” (Chinese version) · Progress in Research of Diluted Magnetic Semiconductors Zhao Jianhua (State Key Laboratory of Semiconductor Superlattices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083) III-V Diluted Magnetic Semiconductors (Ga, Mn) As, including (Ga, Mn) As growth and preparation, basic magnetic properties, magnetic transport characteristics, magneto-optical properties, magnetic origin, related heterostructures and spin injection, The research progress of other dilute magnetic semiconductors such as IV, III-VI and IV-VI semiconductors is briefly introduced. At the end of this article, the desirability of ideal dilute magnetic semiconductors and their future prospects are described.