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本文着重研究了玻璃栅介质(GGI)氢化非晶硅双极性场效应晶体管(α-Si:HBFET)的转移特性,并比较了SiO_2和SiO_2/α-SiN_x:H栅介质α-Si:HFET的性质.业已发现:(1)硼掺杂和磷掺杂不仅可以人大地提高(GGI)α-Si:HBFET的电流驱动能力,而且可以大大地改善其双极对称性.(2)(GGI)未掺杂α-Si:HBFET可以用来构成静态特性良好的CMOS倒相器.(3)SiO_2栅介质α-Si:HFET具有典型的双极性,但是SiO_2/α-SiN_x:H栅介质α-Si:HFET则不是双极性的.
This paper focuses on the transfer characteristics of GGI HBTs and compares the results of the Si_2_α: Si_x: H gate dielectric α-Si: HFETs It has been found that: (1) Boron doping and phosphorus doping can not only improve the current driving capability of the GGI a-Si: HBFET but also greatly improve the bipolar symmetry. (2) (GGI ) Undoped a-Si: HBFETs can be used to form CMOS inverters with good static characteristics. (3) SiO 2 Gate Dielectric α-Si: HFETs have typical bipolarity but SiO 2 / α-SiN_x: H gate dielectrics α-Si: HFET is not bipolar.