High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

• 作 者: 徐学俊 陈少武 徐海华 孙阳 俞育德 余金中 王启明
• 机 构: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
• 出 处: Chinese Physics B
• 发表日期: 2009年09期
• 关键词: switch High-speed 2 optic waveguide extinction interferometer behaviour figure f

A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer(MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator(SOI).The switch behaviour is achieved through the plasma dispersion effect of silicon.The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm.The measurement results show that the switch has a VπLπ figure of merit of 0.145 V.cm and the extinction ratios of two output ports and cross talk are 40 dB,28 dB and 28 dB,respectively.A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behavior is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm × 340 nm. The measurement results show that the switch has a VπLπ figure of merit of 0.145 V. cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and 28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.