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本文采用化学溶液沉积 (CSD)工艺在Si(10 0 )衬底上制备了Bi4 Ti3O12 铁电薄膜 ,这种薄膜的X射线衍射 (XRD)结果显示其具有较好的结晶性。运用X射线光电能谱仪 (XPS)对薄膜的结构进行了研究 ,分析结果表明 ,衬底中Si向镀在其上的Bi4 Ti3O12 膜层内扩散 ,影响扩散的主要因素是膜厚及退火温度。
In this paper, Bi4Ti3O12 ferroelectric thin films were deposited on Si (100) substrates by chemical solution deposition (CSD). The XRD results of the thin films show that they have good crystallinity. The structure of the films was investigated by X-ray photoelectron spectroscopy (XPS). The results show that the diffusion of Si into the Bi 4 Ti 3 O 12 films deposited on the substrate diffuses into the films, the main factors that affect the diffusion are film thickness and annealing temperature .