,Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony

• 作 者: Fangdong Tang Qianheng Du Cedomir Petrovic Wei Zhang Mingquan He Liyuan Zhang
• 机 构: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano
• 出 处: 中国物理B（英文版）
• 发表日期: 2019年3期
• 关键词: two-carrier transport negative differential resistance quantum oscillations FeSb

We present a systematical study on single crystalline FeSb2 using electrical transport and magnetic torque measurements at low temperatures.Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport.Current-controlled negative differential resistance (CC-NDR) observed in current-voltage characteristics below ～ 7 K is closely associated with the intrinsic transition ～ 5 K of FeSb2,which is,however,mediated by extrinsic current-induced Joule heating effect.The antimony crystallized in a preferred orientation within the FeSb2 lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen (dHvA) oscillations,and results in the regular angular dependence of the oscillating frequencies.Nevertheless,possible existence of intrinsic non-trivial states cannot be completely ruled out.Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb2 crystals.