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引言电子束检测比机械探针检测优越性多,是对大规模集成电路进行动态测试和失效分析的有效手段。然而用普通的扫描电镜难于对电位衬度进行定量测量,因为它获取信号的机理与机械探针不同,如图1所示。如果不计电抗效应,那么金属探针探测的电压Vi应与样品电位Vo相等。而电子束检测是通过入射电子轰击样品,激发出二次电子,然后二次电子被探头接收并转换成电信号来实现。Vo与Vi之间的关系受下列诸因素的影响:
Introduction Electron beam detection is superior to mechanical probe detection and is an effective method for dynamic testing and failure analysis of large scale integrated circuits. However, it is difficult to measure the potential contrast by ordinary scanning electron microscopy because of the difference in the mechanism of signal acquisition from the mechanical probe, as shown in FIG. 1. If you do not count the reactance effect, then the metal probe detection voltage Vi should be equal to the sample potential Vo. The electron beam detection is through the incident electron bombardment of the sample, to stimulate secondary electrons, and then secondary electrons are received by the probe and converted into electrical signals to achieve. The relationship between Vo and Vi is affected by the following factors: