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运用卢瑟福背散射(RBS)和二次离子质谱(SIMS)技术相结合测量了SnO_2透明导电膜的密度和膜厚,对于常压CVD法制备的SnO_2薄膜密度约为6.20g/cm~3,接近相应块状材料的密度。采用~(19)F(p,αγ)~(16)O共振核反应技术测量了用于非晶硅太阳能电池电极的大面积掺氟SnO_2(FTO)中氟的含量和深度分布以及50—180keV的~(19)F~+离子注入SnO_2膜中氟离子的射程分布参数。结果表明,FTO膜中氟元素的含量和深度分布并不是均匀的,而是在0.6×10~(20)—6.O×10~(20)/cm~3间波动;50—180keV的~(19)F~+离子注入SnO_2膜中氟离子的平均投影射程(R_P)值与理论计算结果符合得很好,而平均投影射程标准偏差(ΔR_P)值则比理论值偏大。
The density and thickness of SnO_2 transparent conductive films were measured by Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). The density of SnO_2 films prepared by atmospheric CVD was about 6.20g / cm ~ 3 , Close to the density of the corresponding bulk material. The fluorine content and depth distribution in large area fluorine-doped SnO_2 (FTO) for amorphous silicon solar cell electrodes were measured by ~ (19) F (p, αγ) ~ (16) O resonance nuclear reaction Fluorine ion distribution in ~ (19) F ~ + ion implanted SnO_2 films. The results show that the content and depth distribution of fluorine in FTO film are not uniform, but fluctuate between 0.6 × 10 ~ (20) -6.O × 10 ~ (20) / cm ~ 3; (19) The average projection range (R_P) of fluoride ions in F ~ + ion implanted SnO_2 films is in good agreement with the theoretical calculation, while the standard deviation of average projection range (ΔR_P) is larger than the theoretical value.