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本文研究了瞬态退火As注入Si的瞬态增强扩散模型。观察了增强扩散与剩余缺陷和晶格恢复之间的关系。用背散射技术测量了As浓度分布,用透射电镜观察了注入层剩余缺陷。发现在1150℃(或1050℃)退火1S晶格结构基本上恢复。在1—12s期间,缺陷密度随退火时间的增加而急剧下降。增强扩散系数在1—5s退火期间最大。在退火温度为1150℃时,退火时间在12—20s之间,注入层损伤几乎完全恢复,在此退火期间增强扩散系数比前述退火过程中的低。最后讨论了退火中晶格恢复和增强扩散机理。
In this paper, the transient enhanced diffusion model of Si implanted by transient annealing As is studied. The relationship between enhanced diffusion and residual defects and lattice recovery was observed. The concentration of As was measured by backscattering technique, and the remaining defects of the implanted layer were observed by transmission electron microscope. It was found that annealing the 1S lattice structure at 1150 ° C (or 1050 ° C) substantially recovered. During 1-12s, the density of defects sharply decreased with the increase of annealing time. Enhanced diffusion coefficient in 1-5s annealing the largest. When the annealing temperature is 1150 ℃, the annealing time is between 12-20s, the damage of the implanted layer is almost completely restored, and the enhanced diffusion coefficient during the annealing is lower than that in the above annealing process. Finally, the mechanism of lattice recovery and diffusion enhancement during annealing is discussed.