Optoelectronic and electrochemical behaviour of γ-CuI thin films prepared by solid iodination proces

• 作 者: Karthik Kumar Chinnakutti Vengatesh Panneerselvam Durai Govindarajan Ajith kumar Soman Kuppusami Parasuraman Shyju Thankaraj Salammal
• 机 构: Centre of Excellence for Energy Research, Sathyabama Institute of Science and Technology, Chennai, 6
• 出 处: 自然科学进展（英文版）
• 发表日期: 2019年5期
• 关键词: Copper iodide Solid iodination Hole mobility Cyclic voltammetry

A simple and efficient solid iodination method has been proposed for the fabrication of p-typeγ-CuI thin films. The structural, morphological, optical, electrical and electrochemical properties have been investigated in order to serve as an effective hole-transporting layer in solid-state solar cells. The fabricated films exhibited p-type conductivity with resistivity of 7.0 × 10?2Ωcm, the hole concentration of～1.13 × 1019 cm?3 and the mobility of 18.34 cm?2 V?1 s?1. The cyclic voltammetry result shows a maximum specific capacitance of 43 mF/cm2 at a scan rate of 10 mV/s. The cyclic stability and capacitance retention were found to be 99.7％. These findings demonstrate thatγ-CuI film can be a potential candidate for multiple applications, such as a hole transporting material for solid-state solar cells and electrochemical supercapacitor.