Room temperature ferromagnetism of Si-doped ZnO thin films prepared by sol-gel method

• 作 者: M. Hassan Farooq Hai-Ling Yang Xiao-Guang Xu Cong-Jun Ran Jun Miao M. Yasir Rafique Li-Qing Pan Yong Jiang
• 机 构: State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering,U
• 出 处: Rare Metals
• 发表日期: 2013年02期
• 关键词: Room hexagonal magnetization preferred annealing attributed saturation quartz do

Pure ZnO and Si-doped ZnO thin films were deposited on quartz substrate by using sol-gel spin coating process. X-ray diffraction analysis shows that all the thin films have hexagonal wurtzite structure and preferred c-axis orientation. Si-doped ZnO films show room temperature ferromagnetism (RTFM) and reach the maximum saturation magnetization value of 1.54 kAm-1 at 3% Siconcentration. RTFM of Si-doped ZnO decreases with the increasing annealing temperature because of the formation of SiO 2 . Photoluminescence measurements suggest that the RTFM in Si-doped ZnO can be attributed to the defect complex related to zinc vacancies V Zn and oxygen interstitials Oi .

Pure ZnO and Si-doped ZnO thin films were deposited on quartz substrates by using sol-gel spin coating process. X-ray diffraction analysis shows that all the thin films have hexagonal wurtzite structure and preferred c-axis orientation. Si-doped ZnO films RTFM of Si-doped ZnO decreases with increasing temperature because of the formation of SiO 2. Photoluminescence measurements suggest that the RTFM (RTFM) and reach the maximum saturation magnetization value of 1.54 kAm -1 at 3% Siconcentration. in Si-doped ZnO can be attributed to the defect complex related to zinc vacancies V Zn and oxygen interstitials Oi.