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据《OPTRONICS》1992年第11期报道,日本日新电机公司已开发成新型研究用的MBE设备“MiniBEa”。MBE法在133.32×10~(11)Pa的超高真空中加热固体材料,把其分子淀积在衬底上而生长单晶。控制膜厚可到原子层,得到优质的单晶薄膜。以前,采用Ⅲ-Ⅴ族材料进行广泛的器件研究和生产,近来MBE法采用Ⅱ-Ⅵ族材料,注意力集中在发光器件的研究。采用Ⅱ-Ⅵ族化合物半导体的发光器件不用非线性光学材料而直接发射绿光,提高光盘的记录密度,并可望应用于显示器,其研究工作相当活跃。
According to “OPTRONICS” No. 11 of 1992, it was reported that Nisshin Electric Motor Co., Ltd. of Japan had developed “MiniBEa”, a new MBE device for research. The MBE method heats a solid material in an ultra-high vacuum of 133.32 x 10 ~ (11) Pa and grows the single crystal by molecular deposition on the substrate. Control the thickness of the atomic layer can be, to obtain high-quality single-crystal film. In the past, a wide range of device research and production has been conducted using Group III-V materials. Recently, the MBE method has adopted Group II-VI materials, and attention has been focused on the research of light-emitting devices. The study of II- Ⅵ compound semiconductor light-emitting devices emits green light directly without using nonlinear optical materials to improve the recording density of the optical disk and is expected to be applied to displays.