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This article presents the bias and geometry optimization procedure for the radio frequency(RF) stability performance of nanoscale symmetric double-gate metal-oxide semiconductor field-effect transistors(DGMOSFETs).The stability model can provide hints for optimizing the DG-MOSFET under an RF range.The device parameters are extracted for different bias and geometry conditions through numerical simulation,and the RF figures of merit such as cut-off frequency(ft) and maximum oscillation frequency(fmax),along with stability factor,are calculated for an optimized structure.The proposed structure exhibits good RF stability performance.
This article presents the bias and geometry optimization procedure for the radio frequency (RF) stability performance of nanoscale symmetric double-gate metal-oxide semiconductor field-effect transistors (DGMOSFETs). The stability model can provide hints for optimizing the DG-MOSFET under an RF range.The device parameters are extracted for different bias and geometry conditions through numerical simulation, and the RF figures of merit such as cut-off frequency (ft) and maximum oscillation frequency (fmax), along with stability factor, are calculated for an optimized structure.The proposed structure shows good RF stability performance.