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为了获得高效的整流器件和微型短波长的发光器件,采用原子层沉积(ALD)法和水浴法合成了具有ZnO-CuO的结构器件。对制备的样品进行了光学和电学特性的检测,获得了22.79的整流比和17.69的理想因子,且门限电压和整流比等特性随CuO厚度增加而减小。在光致发光(PL)特性上,具有显著的由ZnO带电激发的385nm紫外光波峰,同时伴有由深能级散射激发的572nm的可见光波峰,且随着CuO厚度的增加紫外光波峰减小,可见光峰变大。实验结果表明,本文制备的器件可以应用在纳米型二极管、光电探测器以及微型光源等领域。
In order to obtain efficient rectifiers and miniature short-wavelength light-emitting devices, structural devices with ZnO-CuO were synthesized by atomic layer deposition (ALD) and water bath. The optical and electrical properties of the prepared samples were tested. The rectification ratio of 22.79 and the ideal factor of 17.69 were obtained. The threshold voltage and rectification ratio decreased with the increase of CuO thickness. On the photoluminescence (PL) characteristics, there is a significant ultraviolet peak at 385 nm excited by ZnO with the peak of visible light at 572 nm excited by deep level scattering, and the peak of UV light decreases with the increase of CuO thickness , The visible peak becomes larger. Experimental results show that the device prepared in this paper can be used in the field of nano-diodes, photodetectors and micro-light sources.