论文部分内容阅读
本文用耦合速率方程，从理论上分析研究了超辐射发光二极管（ＳＬＤ）的功率输出特性。主要讨论了腔面反射率对其功率输出特性的影响。研究结果表明，半导体激光器（ＬＤ）存在一最佳输出功率腔面反射率，随腔面反射率的降低，ＳＬＤ的功率曲线斜率减小，输出功率降低，光谱调制深度减小。增大后腔面反射率可以提高ＳＬＤ的输出功率，减小其工作电流。由于腔面反射率的降低，前后传输的光子在有源区内的分布的对称性发生了变化，表现为非均匀性，后向传输波大于前向传输波。最后，把理论计算结果同我们研制的１．３μｍ徐层结构超辐射发光二极管的实验结果作了比较，得到了较好符合。
In this paper, coupled with the rate equation, the theoretical analysis of the superluminescent diode (SLD) power output characteristics. The effect of cavity surface reflectivity on its power output characteristics is mainly discussed. The results show that there is an optimum output power of the surface area of the semiconductor laser (LD). With the reduction of the surface reflectance, the slope of the power curve of the SLD decreases, the output power decreases and the depth of modulation decreases. Increasing the back surface reflectance can increase the SLD’s output power and reduce its operating current. Due to the reduction of the reflectivity of the cavity surface, the symmetry of the distribution of photons in the active region changes before and after the change, which is inhomogeneous. The backward propagating wave is larger than the forward propagating wave. Finally, the theoretical calculation results are compared with the experimental results of the 1.3μm Xu layer structure superluminescent LED we developed, which is in good agreement.