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氮化硅(SiNx)薄膜是一种广泛应用于半导体光电器件的介质膜,其性质的优劣直接影响器件的性能。使用SiH4与NH3作为反应气体制备出的氮化硅薄膜含有大量氢,应用于某些光电器件时,会导致器件工作时光电特性不稳定。针对此问题研发了一种使用SiH4与N2作为反应气体,Ar作为稀释气体的工艺方法,即无氨工艺。使用等离子体增强化学气相沉积(PECVD)法,通过研究各工艺参数对薄膜性能的影响,制备出了一种含氢量低的氮化硅薄膜。通过傅里叶变换红外吸收谱(FTIR)测试了无氨工艺制备的氮化硅薄膜的含氢量,和使用SiH4与NH3作为反应气体制备出的氮化硅薄膜相比含氢量明显降低。
Silicon nitride (SiNx) film is a kind of dielectric film which is widely used in semiconductor optoelectronic devices. The properties of SiNx film directly affect the performance of the device. Silicon nitride films prepared using SiH4 and NH3 as reaction gases contain a large amount of hydrogen, which, when applied to certain optoelectronic devices, results in instability of the photoelectric properties of the device during operation. In response to this problem, we developed a process that uses SiH4 and N2 as reactant gases and Ar as a diluent gas, that is, an ammonia-free process. A plasma-enhanced chemical vapor deposition (PECVD) method was used to fabricate a silicon nitride film with low hydrogen content by studying the effect of various process parameters on the film properties. The hydrogen content of the silicon nitride films prepared by the ammonia-free process was tested by Fourier transform infrared absorption spectroscopy (FTIR), and the hydrogen content was significantly lower than that of the silicon nitride films prepared by using SiH4 and NH3 as reaction gases.