论文部分内容阅读
采用等离子体增强化学气相淀积 ( PECVD)法在 Si( 1 0 0 )衬底上淀积一层厚度约为1 70 nm的富 Ge高 C含量的 Si1- x- y Gex Cy 薄膜 ,然后将其分别在 80 0℃和 1 1 0 0℃下湿氧氧化2 0 min.在室温下观测到强烈的光致发光 .室温下的光致发光谱 ( PL谱 )测量显示 ,80 0℃下氧化后的样品在 370 nm和 396nm附近有两个光致发光带 ,1 1 0 0℃下氧化后的样品只在 396nm附近有一个光致发光带 .396nm附近的发光带可归之于由氧化薄膜中的缺陷 O- Si- O ( Si02 )或 O- Ge-O( Ge02 )引起的 ,而 370 nm附近的发光带与薄膜中 Ge- C对发光中心有关
A Ge-rich high-C content Si1-x-y Gex Cy thin film with a thickness of about 170 nm was deposited on a Si (100) substrate by plasma enhanced chemical vapor deposition (PECVD) The samples were wet oxidized for 20 min at 80 0 ℃ and 1 100 ℃, respectively, and strong photoluminescence was observed at room temperature.The measurement of PL spectra at room temperature showed that oxidation at 80 ℃ The latter sample has two photoluminescence bands at 370 nm and 396 nm, and the oxidized sample only has a photoluminescence band near 396 nm at 1100 ° C. The luminescence band near 396 nm can be attributed to the oxidation band O-Si-O (Si02) or O-Ge-O (Ge02), and the emission band around 370 nm is related to the luminescence center of Ge-C in the film