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在半导体集成电路工艺中,很重要的步骤就是有选择性地在半导体中掺入N型或P型杂质。磷扩散就是为了形成高浓度的N~+区,制作双极NPN晶体管的发射极E和集电极C的接触区,PNP晶体管的基极接触区,以及单极JFET的源漏接触区,P沟道JEET的栅极接触区,还有夹断电阻的夹断区等。所以磷扩散是集成电路工艺中的重要工艺之一。在磷扩散中用的磷源通常有两种,一种是液态源,就是采用三氯氧磷作杂质源,在
In the semiconductor integrated circuit process, a very important step is to selectively incorporate N-type or P-type impurities into semiconductors. Phosphorus diffusion is to form a high concentration of N ~ + region, the bipolar NPN transistor emitter E and collector C contact region, PNP transistor base contact region, and unipolar JFET source and drain contact region, P groove Road JEET the gate contact area, there are clip-off resistance clip-off zone. Therefore, phosphorus diffusion is one of the important processes in integrated circuit technology. There are usually two kinds of phosphorus sources used in phosphorus diffusion, one is liquid source, that is, phosphorus oxychloride is used as impurity source,