A general metrology of stress on crystalline silicon with random crystal plane by using micro-Raman

• 作 者: Wei Qiu Lulu Ma Qiu Li Huadan
• 机 构: TianjinKeyLaboratoryofModemEngineeringMechanics,SchoolofMechanicalEngineering
• 出 处: 力学学报:英文版
• 发表日期: 2018年6期
• 关键词: Raman-mechanical relationship RANDOM crystal plane Monocrystalline silicon Raman
• 基金项目: This work is financially supported by the National Natural Science Foundation of China(Grants 11772223,11772227,and 61727810).

The requirement of stress analysis and measurement is increasing with the great development of heterogeneous structures and strain engineering in the field of semiconductors.Micro-Raman spectroscopy is an effective method for the measurement of intrinsic