Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/

• 作 者: 郑学军 张俊杰 周益舂 唐明华 杨博 陈义强
• 机 构: FacultyofMaterials,KeyLaboratoryofLowDimensionalMaterials＆ApplicationTechnology
• 出 处: 中国有色金属学会会刊：英文版
• 发表日期: 2007年A02期
• 关键词: MFIS电容器 铁电薄膜 介电性能 模拟 MFIS BNT ferroelectric thin film memory window Silvaco/A
• 基金项目: Projects （10472099, 0672139） supported by the National Natural Science Foundation of China, Project （207079） supported by Key Project of Ministry of Education of China： Project （05FJ2005） supported by

Metal-ferroelectric-insulator-silicon(MFIS) capacitors with Bi3.15Nd0.85Ti3O12(BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas,and the effects of applied voltage and insulator layer on capacitance-voltage(C-V) hystere