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研究了 Si O2 掺杂对 Sn O2 - Zn O- Nb2 O5 压敏陶瓷的影响。实验结果表明 ,Si O2 可以十分显著地影响Sn O2 - Zn O- Nb2 O5 压敏陶瓷的物理和电子性质。掺杂范围为 0 .0 5 %～ 0 .40 % (摩尔分数 )时 ,材料密度在 6.2 1～ 6.5 6g/ cm3之间变动 ,非线性系数在 7.42～ 12 .80之间。烧失率、势垒电压和非线性系数的测量均表明 :掺有x (Si O2 ) =0 .2 %的 Sn O2 - Zn O- Nb2 O5 压敏陶瓷的非线性最好 ,其势垒电压为 0 .67e V,非线性系数达 12 .80
The effect of Si O2 doping on Sn O2 - Zn O Nb2 O5 varistor ceramic was investigated. The experimental results show that Si O2 can influence the physical and electronic properties of SnO2 - ZnO - Nb2 O5 varistor ceramics very significantly. When the doping range is from 0.05% to 0.40% (mole fraction), the material density varies from 6.21 to 6.56 g / cm3 and the nonlinear coefficient is between 7.42 and 12.80. The measurement of burn-in loss, potential barrier voltage and non-linearity coefficient all showed that the nonlinearity of Sn O2 - Zn O Nb 2 O 5 varistor ceramics doped with x (Si O 2) = 0.2% is the best, Is 0.67e V, the nonlinear coefficient is 12.8