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The growth of semi-insulating SI: InP (Fe) using N_2+H_2 as a carrier gas through chloride vapor phase(VPE) is reported for the first time. The incorporation of Fe is achieved by using FeCl_2 generated by reaction of HCl and Fe. The transport of Fe as FeCl_2,commonly reduced by a large hydrogen partial pressure in convertional VPE system, has greatly improved by the use of N_2. A proper N_2 to H_2 ratio for the iror. incorporation and optimal growth procedure are discussed. The resitivity of 5×10~8Ω·cm is comparable with the best results by MOCVD. Especially the technique has been successfully used for the preparation of quantum well laser diode.
The incorporation of Fe is achieved by using FeCl_2 generated by reaction of HCl and Fe . The transport of Fe as FeCl_2, commonly reduced by a large hydrogen partial pressure in convertional VPE system, has greatly improved by the use of N_2. A proper N_2 to H_2 ratio for the iror. Incorporation and optimal growth procedure are discussed. The resitivity of 5 × 10 ~ 8Ω · cm is comparable with the best results by MOCVD. Especially the technique has been successfully used for the preparation of quantum well laser diode.