A joint continuum and transitional/free-molecular model for gas flow in semiconductor processing cha

来源 :29th International Symposium on Rarefied Gas Dynamics(第29届国际 | 被引量 : 0次 | 上传用户：king2xl

【摘要】

：

In most semiconductor processing chambers that operate at vacuum conditions,the pressure can range from sub to a few hundred milli-Torrs,while the characteristic geometric dimensions of chamber compon

【作者】

：

Ning Zhou

【机构】

：

AMEC,201201 Shanghai,China

【出处】

：

29th International Symposium on Rarefied Gas Dynamics(第29届国际

【发表日期】

：

2014年11期

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