Irradiation effects of low-energy ion beam on semiconductor nanowires

• 作 者: Quan-Lin Ye Tom Wu
• 机 构: Department of Physics, Hangzhou Normal University, Hangzhou 310036, China
• 出 处: 中国物理学会2011年秋季学术会议
• 发表日期: 2011年9期
• 关键词: Ion beam nanowires bending Zinc Oxide Photoluminescence

Low-energy ion beams are usually used for substrate cleaning and sectioning.Here we use low-energy Ar+ ion beam to sharpen and bend ZnO nanowires (NWs).After the nanoengineering with ion beam,the ZnO NWs exhibited enhanced ultraviolet photoluminescence (PL) and deep level emission were completely suppressed.