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电子元件的超微型化和高集成化,对金属互连线的导热性能提出极高的要求;同时,新型高性能光电材料的开发,又需要尽可能降低受光激发电子与声子之间的耦合。电子、声子的相互作用,对于能量转换与传递过程微观机理的研究至关重要。这些载能粒子的作用时间都在飞秒-皮秒量级,本文采用飞秒激光瞬态热反射方法,对铜薄膜中微观粒子作用过程进行了飞秒量级的实验研究。通过对实验系统精细调节,得到了理想的信号曲线,在此基础上测量了不同泵浦光功率下沉积在硅基底上厚度为60 nm铜薄膜的电子-声子耦合系数,测量结果为(11～12)×10~(16)W/(m~3K),和理论值14×10~(16)W/(m~3K)较为接近,并且不随泵浦光强发生变化。
The miniaturization and high integration of electronic components have made extremely high demands on the thermal conductivity of metal interconnects. At the same time, the development of new high-performance optoelectronic materials needs to minimize the coupling between the photoexcited electrons and the phonons . The interaction of electrons and phonons is crucial for the study of the microscopic mechanism of energy transfer and transfer. The function time of these loading particles is on the order of femtosecond - picosecond. In this paper, the femtosecond laser transient thermal reflection method is used to study the microscopic particles’ action in the thin film. Through the fine adjustment of the experimental system, the ideal signal curve was obtained. Based on this, the electron-phonon coupling coefficient of the copper film with a thickness of 60 nm deposited on the silicon substrate under different pump powers was measured. The measured result was (11 ~ 12) × 10 ~ (16) W / (m ~ 3K), which is close to the theoretical value of 14 × 10 ~ (16) W / (m ~ 3K) and does not change with the pump light intensity.