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As feature sizes of transistors inch towards 10 nanometer,simulations including quantum effects and atomistic details are inevitable.
Multi-scale Quantum Mechanics/Electromagnetics Method for Device Simulations
【摘 要】
：
As feature sizes of transistors inch towards 10 nanometer,simulations including quantum effects and atomistic details are inevitable.
【机 构】
：
Beijing Computational Sci.Research Center
【出 处】
：
第八届工业与应用数学国际大会
【发表日期】
：
2015年期
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