An efficient technique for in situ hydrogen doping in ZnO: Al films prepared by magnetron sputtering

• 作 者: Changshan Hao Ming Li Mandar M.Shirolkar Shiliu Yin Haiqian Wang
• 机 构: Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technolo
• 出 处: 2nd International congress on advanced materials(AM2013)第二届国
• 发表日期: 2013年12期

　　Hydrogenated ZnO: Al films were prepared by radical assisted magnetron sputtering.By applying a separated RF power in addition to the sputtering power,the introduced hydrogen molecules were converted into radicals with high reactivity.This significantly improves the the efficiency of hydrogen doping.Hydrogenated ZnO: Al films with the lowest resistivity of 1.57 × 10-3 Ω cm were prepared at 2.3% hydrogen ratio by applying 2 kW RF power.