【摘 要】
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Background, Motivation and Objective For high performance piezoelectrics, few technology options are currently available. Recent study projected a novel sound pressure sensor using a ferroelectrics-ga
【机 构】
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Graduate School of System Design, Tokyo Metropolitan University, Tokyo, Japan
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Background, Motivation and Objective For high performance piezoelectrics, few technology options are currently available. Recent study projected a novel sound pressure sensor using a ferroelectrics-gated FET [1], but few were reported with an evident observation. In this study, we propose a structure possessing direct coupling of a PZT to a gate of a MOS-FET (PZT-FET), which is characterized by direct control of a semiconductor channel with charges generated by piezoelectric effect and enables ultrasound receiving with high sensitivity and wide bandwidth. This sensor is promising for application to a medical diagnosis and an NDT requiring higher resolution and deeper imaging. We measure its acoustic properties.
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