In2O3∶H for enabling highly NIR-transparent perovskite solar cells and 24.6% 4-T perovskite/CIS tand

• 作 者: Yan Jiang
• 机 构: Energy Materials and Optoelectronics Unit of Songshan Lake Materials Laboratory Dongguan, Guangdong
• 出 处: 第八届新型太阳能材料科学与技术学术研讨会
• 发表日期: 2021年8期
• 关键词: hydrogenated indium oxide carrier mobility perovskite tandem solar cell optical

　　High efficiency four-terminal (4-T) tandem solar cells rely on three transparent electrodes with high conductivity and low free carrier absorption in the near-infrared (NIR) region.In this work,a high-mobility In2O3∶H (IO∶H) film (129 cm2 V-1 s-1) is prepared by independently controlling H2 and O2 gas flows during magnetron sputtering.When using the IO∶H film as the front electrode in NIR transparent perovskite solar cell (PSC),a 17.3% steady-state power conversion efficiency and an 82% average transmittance between 820 and 1300 nm are achieved.In combination with an 18.1% CIS solar cell,a 24.6% perovskite/CIS tandem device in 4-T configuration is demonstrated.In addition,tunning H2 and O2 partial pressures decreases the crystallization temperature to 130 ℃.Optical analysis suggests that an amorphous IO∶H film (without post annealing) and a partially crystallized IO∶H film (post annealed at 150 ℃),when used as a rear electrode in a NIR-transparent PSC and a front electrode in a CIS solar cell,respectively,can outperform the widely used indium-doped zinc oxide (IZO) electrodes,leading to a 1.38 mA/cm2 short-circuit current (Jsc) gain in the bottom CIS cell of 4-T tandems.