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  5. Effect of Crystal Quality on Fermi-level pinning in Metal-Pentacene Junction

Effect of Crystal Quality on Fermi-level pinning in Metal-Pentacene Junction

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：q355868060
【摘 要】
：
Fermi-level pinning phenomenon,which provides undesirable Schottky barrier height (BH) without regard to metal workfunction,has been previously confirmed at metal-organic (M/O) junction.
【作 者】
：
Seong-Guk Jeong Myung-Hoon Lim Taewook Kim In-yeal Lee 
【机 构】
：
Department of Electronics and Radio Engineering, College of Electronics and Information, Kyung Hee U
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Pentacene M/O Fermi-level pinning 
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Fermi-level pinning phenomenon,which provides undesirable Schottky barrier height (BH) without regard to metal workfunction,has been previously confirmed at metal-organic (M/O) junction.
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