【摘 要】
：
Mobility boosters are imminently required for high performance and low power CMOS generations.Compressively strained silicon-germanium(sSiGe)channel,integra
【机 构】
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State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and I
【出 处】
：
2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
论文部分内容阅读
Mobility boosters are imminently required for high performance and low power CMOS generations.Compressively strained silicon-germanium(sSiGe)channel,integrated into a Si/sSiGe/SOI quantum well(QW)MOSFET,is a promising candidate for future p-MOSFETs due to its superior hole mobility and compatibility with sophisticated Si processes [1-3].In this work,Quantum-well p-MOSFETs are fabricated on(strained)Si/strained SiGe/(strained)SOI hetero-structure substrates and the effects of Si cap,strain,temperature and alloy scattering on hole mobility are investigated.
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