Growth of bilayer graphene on copper foil

• 作 者: HuafengWang;WengangLuo;YufeiCao;KaiyouWang;
• 机 构: Institute of Semiconductors, Chinese of Academy of Sciences, P O Box 912, Beijing, P R China(100083)
• 出 处: 中国物理学会2012年秋季学术会议
• 发表日期: 2012年期

Cost effective method to get controllable high quality graphene is meaningful for the basic research and industry application.Graphene with mobility 25000 cm2V–1s–1 and 7100 cm2V–1s–1 have been synthesized by chemical vapor deposition (CVD) using cost Cu or Pt foil [1‐2].